Harris Corporation IRFR9110

MOSFET P-CH 100V 3.1A DPAK

Manufacturer: Harris Corporation
Manufacturer's number: Harris Corporation IRFR9110
Package: Bulk
Datasheet: PDF
Stock: 554
SKU: IRFR9110
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Details

Parameters
Mfr	Harris Corporation
Series	-
Package	Bulk
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	3.1A (Tc)
Rds On (Max) @ Id, Vgs	1.2Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.7 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	200 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-PAK (TO-252AA)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status	RoHS non-compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	0000.00.0000
Standard Package	1

P-Channel 100 V 3.1A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-PAK (TO-252AA)