Infineon Technologies IPB50N10S3L16ATMA2

MOSFET N-CH 100V 70A TO263-3

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPB50N10S3L16ATMA2
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 3094
SKU: IPB50N10S3L16ATMA2
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Details

Parameters
Mfr	Infineon Technologies
Series	Automotive, AEC-Q101, OptiMOS®-T
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	15.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2.4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs	64 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4180 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	100W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3-2
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	448-IPB50N10S3L16ATMA2TR
Standard Package	1

N-Channel 100 V 50A (Tc) 100W (Tc) Surface Mount PG-TO263-3-2