Infineon Technologies IPD60R520CP

N-CHANNEL POWER MOSFET

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPD60R520CP
Package: Bulk
Datasheet: PDF
Stock: 7268
SKU: IPD60R520CP
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Details

Parameters
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	630 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	66W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3-313
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number	IPD60R
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1
Mfr	Infineon Technologies
Series	CoolMOS™ CP
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	520mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA

N-Channel 600 V 6.8A (Tc) 66W (Tc) Surface Mount PG-TO252-3-313