Infineon Technologies IPI90N04S402TATMA1

MOSFET

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPI90N04S402TATMA1
Package: Bulk
Datasheet: -
Stock: 9360
SKU: IPI90N04S402TATMA1
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Details

Parameters
Mfr	Infineon Technologies
Series	OptiMOS®-T2
Package	Bulk
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.5mOhm @ 90A, 10V
Vgs(th) (Max) @ Id	4V @ 95µA
Gate Charge (Qg) (Max) @ Vgs	118 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	9430 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO262-3-1
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1

N-Channel 40 V 90A (Tc) 150W (Tc) Through Hole PG-TO262-3-1