Infineon Technologies IPW95R310PFD7XKSA1

MOSFET N-CH 950V 17.5A TO247-3

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPW95R310PFD7XKSA1
Package: Tube
Datasheet: PDF
Stock: 5050
SKU: IPW95R310PFD7XKSA1
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Details

Parameters
Mfr	Infineon Technologies
Series	CoolMOS™
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	950 V
Current - Continuous Drain (Id) @ 25°C	17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	310mOhm @ 10.4A, 10V
Vgs(th) (Max) @ Id	3.5V @ 520µA
Gate Charge (Qg) (Max) @ Vgs	61 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1765 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3-41
Package / Case	TO-247-3
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	30

N-Channel 950 V 17.5A (Tc) 125W (Tc) Through Hole PG-TO247-3-41