Infineon Technologies IQE065N10NM5SCATMA1

OPTIMOS LOWVOLTAGE POWER MOSFET

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IQE065N10NM5SCATMA1
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 7322
SKU: IQE065N10NM5SCATMA1
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Details

Parameters
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 100W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-WHSON-8-1
Package / Case	8-PowerWDFN
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	6,000
Mfr	Infineon Technologies
Series	OptiMOS™ 5
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	13A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3.8V @ 48µA
Gate Charge (Qg) (Max) @ Vgs	43 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 50 V

N-Channel 100 V 13A (Ta), 85A (Tc) 2.5W (Ta), 100W (Tc) Surface Mount PG-WHSON-8-1