Infineon Technologies IRFB61N15DPBF

IRFB61N15 - 12V-300V N-CHANNEL P

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IRFB61N15DPBF
Package: Bulk
Datasheet: PDF
Stock: 4101
SKU: IRFB61N15DPBF
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Details

Parameters
Mfr	Infineon Technologies
Series	HEXFET®
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Rds On (Max) @ Id, Vgs	32mOhm @ 36A, 10V
Vgs(th) (Max) @ Id	5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	140 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	3470 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	2.4W (Ta), 330W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Moisture Sensitivity Level (MSL)	Vendor Undefined
REACH Status	REACH Unaffected
Other Names	2156-IRFB61N15DPBF-448
Standard Package	1

N-Channel 150 V 60A (Tc) 2.4W (Ta), 330W (Tc) Through Hole TO-220AB