International Rectifier IRFU3410PBF

MOSFET N-CH 100V 31A IPAK

Manufacturer: International Rectifier
Manufacturer's number: International Rectifier IRFU3410PBF
Package: Bulk
Datasheet: PDF
Stock: 1835
SKU: IRFU3410PBF
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Details

Parameters
Mfr	International Rectifier
Series	HEXFET®
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	39mOhm @ 18A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1690 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3W (Ta), 110W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	IPAK (TO-251AA)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
ECCN	EAR99
HTSUS	8542.39.0001
Standard Package	1

N-Channel 100 V 31A (Tc) 3W (Ta), 110W (Tc) Through Hole IPAK (TO-251AA)