Inventchip IV1Q12160T4

SIC MOSFET, 1200V 160MOHM, TO-24

Manufacturer: Inventchip
Manufacturer's number: Inventchip IV1Q12160T4
Package: Tube
Datasheet: PDF
Stock: 106
SKU: IV1Q12160T4
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Details

Parameters
Mfr	Inventchip
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	195mOhm @ 10A, 20V
Vgs(th) (Max) @ Id	2.9V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs	43 nC @ 20 V
Vgs (Max)	+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds	885 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	138W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-4
Package / Case	TO-247-4
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
Other Names	4084-IV1Q12160T4
Standard Package	30

N-Channel 1200 V 20A (Tc) 138W (Tc) Through Hole TO-247-4