NXP Semiconductors PSMN070-200B,118

NEXPERIA PSMN070 - 35A, 200V, 0.

Manufacturer: NXP Semiconductors
Manufacturer's number: NXP Semiconductors PSMN070-200B,118
Package: Bulk
Datasheet: PDF
Stock: 6795
SKU: PSMN070-200B,118
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Details

Parameters
Mfr	NXP Semiconductors
Series	TrenchMOS™
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	70mOhm @ 17A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	77 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4570 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	250W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Moisture Sensitivity Level (MSL)	Vendor Undefined
REACH Status	REACH Unaffected
Other Names	2156-PSMN070-200B,118-954
Standard Package	1

N-Channel 200 V 35A (Tc) 250W (Tc) Surface Mount D2PAK