NXP USA Inc. PMN50UPE,115

PMN50UPE,115

Manufacturer: NXP USA Inc.
Manufacturer's number: NXP USA Inc. PMN50UPE,115
Package: Bulk
Datasheet: PDF
Stock: 9683
SKU: PMN50UPE,115
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Details

Parameters
Mfr	NXP USA Inc.
Series	-
Package	Bulk
Product Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	66mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15.7 nC @ 10 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	24 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	510mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SC-74, SOT-457
RoHS Status	ROHS3 Compliant
ECCN	EAR99
HTSUS	8541.21.0095
Standard Package	3,000

P-Channel 20 V 3.6A (Ta) 510mW (Ta) Surface Mount 6-TSOP