onsemi FCA20N60-F109

DISCRETE MOSFET

Manufacturer: onsemi
Manufacturer's number: onsemi FCA20N60-F109
Package: Bulk
Datasheet: PDF
Stock: 13
SKU: FCA20N60-F109
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Unit Price: $3.1900

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Details

Parameters
Mfr	onsemi
Series	SuperFET™
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	98 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	3080 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	208W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3PN
Package / Case	TO-3P-3, SC-65-3
Moisture Sensitivity Level (MSL)	Vendor Undefined
REACH Status	REACH Unaffected
Other Names	2156-FCA20N60-F109-488
Standard Package	94

N-Channel 600 V 20A (Tc) 208W (Tc) Through Hole TO-3PN