PN Junction Semiconductor P3M12160K4

SICFET N-CH 1200V 19A TO-247-4

Manufacturer: PN Junction Semiconductor
Manufacturer's number: PN Junction Semiconductor P3M12160K4
Package: Tube
Datasheet: PDF
Stock: 4285
SKU: P3M12160K4
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Details

Parameters
Standard Package	1
Mfr	PN Junction Semiconductor
Series	P3M
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	19A
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	192mOhm @ 10A, 15V
Vgs(th) (Max) @ Id	2.4V @ 2.5mA (Typ)
Vgs (Max)	+21V, -8V
FET Feature	-
Power Dissipation (Max)	110W
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-4L
Package / Case	TO-247-4
RoHS Status	ROHS3 Compliant
REACH Status	REACH Affected
Other Names	4237-P3M12160K4

N-Channel 1200 V 19A 110W Through Hole TO-247-4L