Rectron USA RM120N85T2

MOSFET N-CH 85V 120A TO220-3

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Details

N-Channel 85 V 120A (Tc) 160W (Tc) Through Hole TO-220-3

Parameters
Mfr	Rectron USA
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	85 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	5.3mOhm @ 60A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5500 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	160W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
HTSUS	8541.10.0080
Other Names	2516-RM120N85T2
Standard Package	5,000