Rectron USA RM50N200HD

MOSFET N-CH 200V 51A TO263-2

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Details

N-Channel 200 V 51A (Tc) 214W (Tc) Surface Mount TO-263-2

Parameters
Mfr	Rectron USA
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	51A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	32mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1598 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	214W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263-2
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
HTSUS	8541.10.0080
Other Names	2516-RM50N200HDTR
Standard Package	8,000