Parameters | |
---|---|
Mfr | Rectron USA |
Series | - |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 20mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 80W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-251 |
Package / Case | TO-251-3 Stub Leads, IPak |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
HTSUS | 8541.10.0080 |
Other Names | 2516-RM50N60IP |
Standard Package | 4,000 |
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