Rohm Semiconductor R6030ENZM12C8

R6030ENZM12C8

Manufacturer: Rohm Semiconductor
Manufacturer's number: Rohm Semiconductor R6030ENZM12C8
Package: Tube
Datasheet: PDF
Stock: 1808
SKU: R6030ENZM12C8
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Details

Parameters
Mfr	Rohm Semiconductor
Series	-
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	130mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	85 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2100 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	120W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3PF
Package / Case	TO-3P-3 Full Pack
Base Product Number	R6030
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Affected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	846-R6030ENZM12C8
Standard Package	30

N-Channel 600 V 30A (Tc) 120W (Tc) Through Hole TO-3PF