STMicroelectronics SCTH60N120G2-7

SICFET N-CH 1200V 60A H2PAK-7

Manufacturer: STMicroelectronics
Manufacturer's number: STMicroelectronics SCTH60N120G2-7
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 9084
SKU: SCTH60N120G2-7
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to Cart

Unit Price: $22.3245

Ext Price: $22.3245

Details

Parameters
Mfr	STMicroelectronics
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	52mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	94 nC @ 18 V
Vgs (Max)	+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds	1969 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	390W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	H2PAK-7
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	497-SCTH60N120G2-7TR
Standard Package	1,000

N-Channel 1200 V 60A (Tc) 390W (Tc) Surface Mount H2PAK-7