Parameters |
Mfr |
Toshiba Semiconductor and Storage |
Series |
Automotive, AEC-Q101, U-MOSVI |
Package |
Tape & Reel (TR) |
Product Status |
Active |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
20 V |
Current - Continuous Drain (Id) @ 25°C |
4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
1.5V, 4.5V |
Rds On (Max) @ Id, Vgs |
55mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id |
1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
10.4 nC @ 4.5 V |
Vgs (Max) |
+6V, -8V |
Input Capacitance (Ciss) (Max) @ Vds |
630 pF @ 10 V |
FET Feature |
- |
Power Dissipation (Max) |
1W (Ta) |
Operating Temperature |
150°C |
Mounting Type |
Surface Mount |
Supplier Device Package |
SOT-23F |
Package / Case |
SOT-23-3 Flat Leads |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
3,000 |
P-Channel 20 V 4A (Ta) 1W (Ta) Surface Mount SOT-23F