Vishay Siliconix SI2324DS-T1-BE3

MOSFET N-CH 100V 2.3A SOT-23

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SI2324DS-T1-BE3
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 4
SKU: SI2324DS-T1-BE3
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Details

Parameters
Mfr	Vishay Siliconix
Series	TrenchFET®
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	1.6A (Ta), 2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	234mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10.4 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	190 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta), 2.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3
Base Product Number	SI2324
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	742-SI2324DS-T1-BE3TR
Standard Package	3,000

N-Channel 100 V 1.6A (Ta), 2.3A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)