Vishay Siliconix SISS5112DN-T1-GE3

N-CHANNEL 100 V (D-S) MOSFET POW

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SISS5112DN-T1-GE3
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 1708
SKU: SISS5112DN-T1-GE3
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Unit Price: $1.5600

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Details

Parameters
Mfr	Vishay Siliconix
Series	TrenchFET®
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	11A (Ta), 40.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	14.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	790 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S
Package / Case	PowerPAK® 1212-8S
Base Product Number	SISS5112
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	3,000

N-Channel 100 V 11A (Ta), 40.7A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8S